Chemistry Platform for the Ultrafast Continuous Synthesis of High‐Quality III–V Quantum Dots

A chemistry platform for the fast continuous synthesis of III–V quantum dots is demonstrated. III-nitride QDs are prepared by using short residence times (less than 30 s) in a one-step process with supercritical solvents. GaN via this route exhibit strong UV photoluminescence structuring emission signal at low temperature (5 K), confirming their high quality. An example metal site substitution given InxGa1-xN solid solution. bandgap shift towards lower energies demonstrated when increasing indium content signals from to visible. The proposed could be easily extrapolated binary and ternary III phosphides or arsenides homologous V source.